NP160N04TUG
PACKAGE DRAWING (Unit: mm)
TO-263-7pin (MP-25ZT)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18754EJ1V0DS
相关PDF资料
NP161N04TUG-E1-AY MOSFET N-CH 40V 160A TO-263-7
NP180N04TUG-E1-AY MOSFET N-CH 40V 180A TO-263-7
NP22N055SLE-E1-AY MOSFET N-CH 55V 22A TO-252
NP32N055SHE-E1-AY MOSFET N-CH 55V 32A TO-252
NP32N055SLE-E1-AY MOSFET N-CH 55V 32A TO-252
NP34N055SHE-E1-AY MOSFET N-CH 55V 34A TO-252
NP34N055SLE-E1-AY MOSFET N-CH 55V 34A TO-252
NP36N055SHE-E1-AY MOSFET N-CH 55V 36A TO252
相关代理商/技术参数
NP160N04TUG-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
NP160N04TUJ 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP160N04TUJ-E1-AY 功能描述:MOSFET N-CH 40V 160A TO-263-7 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP160N04TUJ-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP160N04TUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP160N04TUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 160A T/R 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 40V, TO263-7P - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 160A TO-263
NP160N04TUK-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP160N055TUJ 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR